Fisica | PHYSICS OF SEMICONDUCTOR DEVICES

cod. 0522600041

PHYSICS OF SEMICONDUCTOR DEVICES

	0522600041
	DIPARTIMENTO DI FISICA "E.R. CAIANIELLO"
	EQF7
	PHYSICS
	2016/2017

PERCORSO COMUNE

	YEAR OF COURSE 1
	YEAR OF DIDACTIC SYSTEM 2014
	SECONDO SEMESTRE

TEACHING UNITS

SSD	CFU	HOURS	ACTIVITY	TYPE OF ACTIVITY
FIS/01	5	40	LESSONS	SUPPLEMENTARY COMPULSORY SUBJECTS
FIS/01	1	12	EXERCISES	SUPPLEMENTARY COMPULSORY SUBJECTS

	Objectives
	THE COURSE AIMS TO PROVIDE THE STUDENTS WITH A THOROUGH KNOWLEDGE OF THE PHYSICS AND TECHNOLOGY OF MODERN SEMICONDUCTOR ELECTRONIC DEVICES. KNOWLEDGE AND UNDERSTANDING: THIS COURSE IS A THOUROUGH STUDY OF THE ELECTRONIC, OPTOELECTRONIC AND TRANSPORT PROPERTIES OF SEMICONDUCTING MATERIALS; IT EXTENSIVELY DEALS WITH MODERN DIODES AND TRANSISTORS, THEIR FABRICATION AND THEIR USAGE IN MODERN INTEGRATED CIRCUITS. STUDENTS WILL BE AWARE OF THE FUNDAMENTAL AND TECHNOLOGICAL CHALLENGES PRESENTED BY THE CONTINUOUS SIZE SCALING AND OF THE CURRENT TRENDS IN NANOELECTRONICS. THE ENERGY BAND MODEL WILL BE CONSTANTLY USED TO PREDICT OR EXPLAIN THE ELECTRICAL AND OPTICAL BEHAVIOR OF SCHOTTKY/PN DIODES AND OF FIELD EFFECT TRANSISTORS. IN THE LABORATORY PART, STATE-OF-ART TECHNIQUES AND TOOLS ARE USED FOR ELECTRO-OPTICAL DEVICE CHARACTERIZATION. ABILITY TO APPLY KNOWLEDGE AND UNDERSTANDING: WITH THIS COURSE THE STUDENT WILL GAIN KNOWLEDGE AND DEVELOP SKILLS FOR RESEARCH ACTIVITY IN A MICRO/NANO-ELECTRONIC LABORATORY OR FOR WORK IN A SEMICONDUCTOR INDUSTRY. FURTHERMORE, THE STUDENT WILL BE ABLE TO UNDERSTAND THE SPECIALIZED SCIENTIFIC LITERATURE.

THE COURSE AIMS TO PROVIDE THE STUDENTS WITH A THOROUGH KNOWLEDGE OF THE PHYSICS AND TECHNOLOGY OF MODERN SEMICONDUCTOR ELECTRONIC DEVICES.

KNOWLEDGE AND UNDERSTANDING:
THIS COURSE IS A THOUROUGH STUDY OF THE ELECTRONIC, OPTOELECTRONIC AND TRANSPORT PROPERTIES OF SEMICONDUCTING MATERIALS; IT EXTENSIVELY DEALS WITH MODERN DIODES AND TRANSISTORS, THEIR FABRICATION AND THEIR USAGE IN MODERN INTEGRATED CIRCUITS. STUDENTS WILL BE AWARE OF THE FUNDAMENTAL AND TECHNOLOGICAL CHALLENGES PRESENTED BY THE CONTINUOUS SIZE SCALING AND OF THE CURRENT TRENDS IN NANOELECTRONICS. THE ENERGY BAND MODEL WILL BE CONSTANTLY USED TO PREDICT OR EXPLAIN THE ELECTRICAL AND OPTICAL BEHAVIOR OF SCHOTTKY/PN DIODES AND OF FIELD EFFECT TRANSISTORS. IN THE LABORATORY PART, STATE-OF-ART TECHNIQUES AND TOOLS ARE USED FOR ELECTRO-OPTICAL DEVICE CHARACTERIZATION.

ABILITY TO APPLY KNOWLEDGE AND UNDERSTANDING:
WITH THIS COURSE THE STUDENT WILL GAIN KNOWLEDGE AND DEVELOP SKILLS FOR RESEARCH ACTIVITY IN A MICRO/NANO-ELECTRONIC LABORATORY OR FOR WORK IN A SEMICONDUCTOR INDUSTRY. FURTHERMORE, THE STUDENT WILL BE ABLE TO UNDERSTAND THE SPECIALIZED SCIENTIFIC LITERATURE.

	Prerequisites
	CALCULUS AND GENERAL PHYSICS. HELPFUL: ELEMENTS OF QUANTUM MECHANICS AND SOLID STATE PHYSICS.

	Contents
	1. PHYSICS AND PROPERTIES OF SEMICONDUCTORS: CRYSTAL STRUCTURE. ENERGY BANDS AND ENERGY GAP. DENSITY OF STATES. FERMI FUNCTION. CARRIER CONCENTRATION AT THERMAL EQUILIBRIUM. CARRIER CONCENTRATIONS AT EXTREMELY HIGH AND LOW TEMPERATURES. CARRIER-TRANSPORT PHENOMENA. THERMAL MOTION. DRIFT AND DIFFUSION CURRENT. EINSTEIN RELATIONSHIP. ELECTRON-HOLE RECOMBINATION. THERMAL GENERATION. QUASI-EQUILIBRIUM AND QUASI-FERMI LEVELS. HETEROJUNCTIONS AND NANOSTRUCTURES. 2. DEVICE FABRICATION TECHNOLOGY: OXIDATION. LITHOGRAPHY. ETCHING. DOPING. DOPANT DIFFUSION. THIN-FILM DEPOSITION. INTERCONNECTS. BACK-END PROCESS. TESTING, ASSEMBLY AND QUALIFICATION. CMOS PROCESS FLOW. STRAINED SILICON. 3. P-N JUNCTIONS (HINTS): DEPLETION REGION. CURRENT-VOLTAGE CHARACTERISTICS. JUNCTION BREAKDOWN. HETEROJUNCTIONS. APPLICATION TO OPTOELECTRONIC DEVICES: SOLAR CELLS. LIGHT-EMITTING DIODES AND SOLID-STATE LIGHTING. DIODE LASERS. PHOTODETECTORS. 4. METAL-SEMICONDUCTOR CONTACTS: FORMATION OF BARRIER. CURRENT TRANSPORT PROCESSES. THERMIONIC EMISSION THEORY. MEASUREMENT OF BARRIER HEIGHT. DEVICE STRUCTURES. APPLICATIONS OF SCHOTTKY DIODES. QUANTUM MECHANICAL TUNNELING. OHMIC CONTACTS. 5. METAL-OXIDE-SEMICONDUCTOR (MOS) CAPACITORS: FLAT-BAND CONDITION AND FLAT-BAND VOLTAGE. SURFACE ACCUMULATION. SURFACE DEPLETION. THRESHOLD VOLTAGE. STRONG INVERSION BEYOND THRESHOLD. MOS C-V CHARACTERISTICS. EFFECTIVE OXIDE THICKNESS. CCD IMAGER AND CMOS IMAGER. 6. MOS TRANSISTOR AND OTHER MOS DEVICES: INTRODUCTION TO THE MOSFET. COMPLEMENTARY MOS (CMOS) TECHNOLOGY. SURFACE MOBILITIES AND HIGH-MOBILITY FETS. TWO DIMENSIONAL ELECTRON GAS SYSTEM (2DEG). MOSFET VT. BODY EFFECT AND STEEP RETROGRADE DOPING. CHANNEL ENGINEERING. QINV IN MOSFET. BASIC MOSFET IV MODEL. CMOS INVERTER. SRAM. DRAM. NONVOLATILE (FLASH) MEMORY DEVICES. 7. MOSFET IN IC-SCALING: TECHNOLOGY SCALING AND MOORE’S LAW. SPEED AND POWER CONSUMPTION. SUBTHRESHOLD CURRENT. VT ROLL-OFF. CURRENT LEAKAGE IN SHORT-CHANNEL MOSFETS. SHALLOW JUNCTION AND METAL SOURCE/DRAIN MOSFET. CHANNEL ENGINEERING. MOSFET COMPACT MODEL FOR CIRCUIT SIMULATION. FINFETS AND OTHER MULTI-GATE TRANSISTORS. THE SOI MOSFET. GATE-ALL-AROUND MOSFET. NATURAL LENGTH. TUNNELING FET. 8. LABORATORY: SCHOTTKY BARRIER MEASUREMENT IN METAL/SEMICONDUCTOR JUNCTIONS. C-V AND I-V MOSFET CHARACTERIZATION.

Contents

1. PHYSICS AND PROPERTIES OF SEMICONDUCTORS:
CRYSTAL STRUCTURE. ENERGY BANDS AND ENERGY GAP. DENSITY OF STATES. FERMI FUNCTION. CARRIER CONCENTRATION AT THERMAL EQUILIBRIUM. CARRIER CONCENTRATIONS AT EXTREMELY HIGH AND LOW TEMPERATURES. CARRIER-TRANSPORT PHENOMENA. THERMAL MOTION. DRIFT AND DIFFUSION CURRENT. EINSTEIN RELATIONSHIP. ELECTRON-HOLE RECOMBINATION. THERMAL GENERATION. QUASI-EQUILIBRIUM AND QUASI-FERMI LEVELS. HETEROJUNCTIONS AND NANOSTRUCTURES.

2. DEVICE FABRICATION TECHNOLOGY:
OXIDATION. LITHOGRAPHY. ETCHING. DOPING. DOPANT DIFFUSION. THIN-FILM DEPOSITION. INTERCONNECTS. BACK-END PROCESS. TESTING, ASSEMBLY AND QUALIFICATION. CMOS PROCESS FLOW. STRAINED SILICON.

3. P-N JUNCTIONS (HINTS):
DEPLETION REGION. CURRENT-VOLTAGE CHARACTERISTICS. JUNCTION BREAKDOWN. HETEROJUNCTIONS. APPLICATION TO OPTOELECTRONIC DEVICES: SOLAR CELLS. LIGHT-EMITTING DIODES AND SOLID-STATE LIGHTING. DIODE LASERS. PHOTODETECTORS.

4. METAL-SEMICONDUCTOR CONTACTS:
FORMATION OF BARRIER. CURRENT TRANSPORT PROCESSES. THERMIONIC EMISSION THEORY. MEASUREMENT OF BARRIER HEIGHT. DEVICE STRUCTURES. APPLICATIONS OF SCHOTTKY DIODES. QUANTUM MECHANICAL TUNNELING. OHMIC CONTACTS.

5. METAL-OXIDE-SEMICONDUCTOR (MOS) CAPACITORS:
FLAT-BAND CONDITION AND FLAT-BAND VOLTAGE. SURFACE ACCUMULATION. SURFACE DEPLETION. THRESHOLD VOLTAGE. STRONG INVERSION BEYOND THRESHOLD. MOS C-V CHARACTERISTICS. EFFECTIVE OXIDE THICKNESS. CCD IMAGER AND CMOS IMAGER.

6. MOS TRANSISTOR AND OTHER MOS DEVICES:
INTRODUCTION TO THE MOSFET. COMPLEMENTARY MOS (CMOS) TECHNOLOGY. SURFACE MOBILITIES AND HIGH-MOBILITY FETS. TWO DIMENSIONAL ELECTRON GAS SYSTEM (2DEG). MOSFET VT. BODY EFFECT AND STEEP RETROGRADE DOPING. CHANNEL ENGINEERING. QINV IN MOSFET. BASIC MOSFET IV MODEL. CMOS INVERTER. SRAM. DRAM. NONVOLATILE (FLASH) MEMORY DEVICES.

7. MOSFET IN IC-SCALING:
TECHNOLOGY SCALING AND MOORE’S LAW. SPEED AND POWER CONSUMPTION. SUBTHRESHOLD CURRENT. VT ROLL-OFF. CURRENT LEAKAGE IN SHORT-CHANNEL MOSFETS. SHALLOW JUNCTION AND METAL SOURCE/DRAIN MOSFET. CHANNEL ENGINEERING. MOSFET COMPACT MODEL FOR CIRCUIT SIMULATION. FINFETS AND OTHER MULTI-GATE TRANSISTORS. THE SOI MOSFET. GATE-ALL-AROUND MOSFET. NATURAL LENGTH. TUNNELING FET.

8. LABORATORY:
SCHOTTKY BARRIER MEASUREMENT IN METAL/SEMICONDUCTOR JUNCTIONS. C-V AND I-V MOSFET CHARACTERIZATION.

	Teaching Methods
	THE COURSE INCLUDES LECTURES ((3 CFU), EXERCISES TO APPLY THEORETICAL CONCEPTS AND ACQUIRE FAMILIARITY WITH THE NUMERICAL VALUES (1 CFU), AND A LABORATORY PART (2 CFU).

	Verification of learning
	ORAL EXAM TO ASSESS THE LEVEL OF UNDERSTANDING OF THE TEORETICAL TOPICS AND A REPORT ON ONE OF THE LABORATORY EXPERIMENTS.

	Texts
	D.A. NEAMEN: "SEMICONDUCTOR PHYSICS AND DEVICES", 4TH ED, 2012, MC GRAW HILL. OPTIONAL TEXTBOOKS FOR FURTHER OR DEEPER STUDY: S.M. SZE, K.K. NG: "PHYSICS OF SEMICONDUCTOR DEVICES", 3RD ED 2006, WILEY. C.C. HU: "MODERN SEMICONDUCTOR DEVICES FOR INTEGRATED CIRCUITS", 2009, PEARSON. G.W. HANSON: "FUNDAMENTALS OF NANOELECTRONICS", 2011, PEARSON. M. LUNDSTROM: "ESSENTIAL PHYSICS OF NANOSCALE TRANSISTORS", 2015, WORLD SCIENTIFIC. Y.TAUR, T.H. NING: "MODERN VLSI DEVICES", 2ND ED, 2009 CAMBRIDGE UNIVERSITY PRESS. D.K. SCHROEDER: "SEMICONDUCTOR MATERIAL AND DEVICE CHARACTERIZATION", 3RD ED, 2008, WILEY.

Texts

D.A. NEAMEN: "SEMICONDUCTOR PHYSICS AND DEVICES", 4TH ED, 2012, MC GRAW HILL.

OPTIONAL TEXTBOOKS FOR FURTHER OR DEEPER STUDY:
S.M. SZE, K.K. NG: "PHYSICS OF SEMICONDUCTOR DEVICES", 3RD ED 2006, WILEY.
C.C. HU: "MODERN SEMICONDUCTOR DEVICES FOR INTEGRATED CIRCUITS", 2009, PEARSON.
G.W. HANSON: "FUNDAMENTALS OF NANOELECTRONICS", 2011, PEARSON.
M. LUNDSTROM: "ESSENTIAL PHYSICS OF NANOSCALE TRANSISTORS", 2015, WORLD SCIENTIFIC.
Y.TAUR, T.H. NING: "MODERN VLSI DEVICES", 2ND ED, 2009 CAMBRIDGE UNIVERSITY PRESS.
D.K. SCHROEDER: "SEMICONDUCTOR MATERIAL AND DEVICE CHARACTERIZATION", 3RD ED, 2008, WILEY.

	More Information
	ON REQUEST, THE COURSE MIGHT INCLUDE THE FOLLOWING OPTIONAL TOPICS: 1. THE BALLISTIC NANOTRANSISTOR: THE LANDAUER APPROACH TO CARRIER TRANSPORT. MODES. THE BALLISTIC MOSFET. BALLISTIC INJECTION VELOCITY. 2. TUNNEL JUNCTIONS AND APPLICATIONS OF TUNNELING: TUNNELING THROUGH A POTENTIAL BARRIER. POTENTIAL ENERGY PROFILES FOR METAL-INSULATOR, METAL-SEMICONDUCTOR, METAL-INSULATOR-METAL JUNCTIONS. DOUBLE BARRIER TUNNELING AND THE RESONANT TUNNELING DIODE. QUANTUM DOT. COULOMB BLOCKADE AND THE SINGLE ELECTRON TRANSISTOR QUANTUM DOTS, WIRES AND WELLS. SINGLE-ELECTRON TRANSISTOR LOGIC. CARBON NANOTUBE AND GRAPHENE TRANSISTORS. AMBIPOLAR GRAPHENE TRANSISTORS. SEMICONDUCTOR NANOWIRE AND 2D MATERIAL FETS. TEACHER'S E-MAIL ADDRESS: DIBANT@SA.INFN.IT

More Information

ON REQUEST, THE COURSE MIGHT INCLUDE THE FOLLOWING OPTIONAL TOPICS:

1. THE BALLISTIC NANOTRANSISTOR: THE LANDAUER APPROACH TO CARRIER TRANSPORT. MODES. THE BALLISTIC MOSFET. BALLISTIC INJECTION VELOCITY.

2. TUNNEL JUNCTIONS AND APPLICATIONS OF TUNNELING: TUNNELING THROUGH A POTENTIAL BARRIER. POTENTIAL ENERGY PROFILES FOR METAL-INSULATOR, METAL-SEMICONDUCTOR, METAL-INSULATOR-METAL JUNCTIONS. DOUBLE BARRIER TUNNELING AND THE RESONANT TUNNELING DIODE.

QUANTUM DOT. COULOMB BLOCKADE AND THE SINGLE ELECTRON TRANSISTOR QUANTUM DOTS, WIRES AND WELLS. SINGLE-ELECTRON TRANSISTOR LOGIC. CARBON NANOTUBE AND GRAPHENE TRANSISTORS. AMBIPOLAR GRAPHENE TRANSISTORS. SEMICONDUCTOR NANOWIRE AND 2D MATERIAL FETS.

TEACHER'S E-MAIL ADDRESS: DIBANT@SA.INFN.IT

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